Written in English
|Contributions||Hallett, A. C. H. (supervisor)|
|LC Classifications||LE3 T52 PHD 1965 F67|
|The Physical Object|
|Pagination||125,  leaves.|
|Number of Pages||125|
Shubnikov-de Haas effect is observed in Bi and Bi Sb alloys (containing − at.% Sb) in pulsed high magnetic fields up to kG. It is found that the amplitude of the quantum oscillation remarkably increases by mixing a small amount of Sb in Bi, and that the magnitude of Cited by: We describe here the study of the Shubnikov–de Haas effect and thermoelectric properties of p-(Bi Sb ) 2 Te 3 single crystals doped with Ga, n-Bi 2– x Tl x Se 3 and p-Sb 2– x Tl x Te Fourier spectra of the oscillations we calculated the mobility of charge carriers and its variation upon doping. We found that Ga has a donor effect in p-(Bi Sb ) 2 Te 3, Tl is an Cited by: 1. L.V. Shubnikov and W.J. de Haas, A new phenomenon in the change of resistance in a magnetic field of single crystals of bismuth, Nature () Google Scholar Author: L. J. Reinders. Shubnikov‐de Haas experiments were performed between and K on n‐Bi 2 Te 3 single crystals with carrier concentrations between × 10 18 and × 10 19 cm − addition the magneto‐Seebeck effect was measured between 20 and K in transverse magnetic fields up to 6 T (60 kG).The Hall effect and Shubnikov‐de Haas oscillations were observed in fields up to T ( kG).
Shubnikov-de Haas frequencies were measured in highly degenerate n-type Bi 2 Se 3 having a higher carrier density (∼9 × 10 25 m-3) than previously Fermi surface was found to be elongated along the trigonal axis, fitting a spheroidal model with an axial ratio of for angles up to θ = 45°. SHUBNIKOV-DE HAAS EFFECT The quantization of the electron energ in solidy s un-der the influenc oef a magneti fielc d lie ast the founda - tion of the Sh-H effect. As resul a otf quantization the quasicontinuous electronic spectru ism transforme d into a quasidiscret one e (Fig. 2). Fo electronr witsh a. Quantum size effect on Shubnikov-de Haas oscillations in nm diameter single-crystalline bismuth nanowire Jeongmin Kim,1,a) Dohun Kim,2,a) Taehoo Chang,1 and Wooyoung Lee1,b) 1Department of Materials Science and Engineering, Yonsei University, Shinchon, Seoul , South Korea 2Department of Physics, University of Maryland, College Park, Maryland , USA. The de Haas-van Alphen (dHvA) effect is an oscillatory variation of the diamagnetic susceptibility as a function of a magnetic field strength (B). The method provides details of the extremal areas of a Fermi surface. The first experimental observation of this behavior was made by de Haas and van Alphen (). They have measured a.
The Shubnikov de Haas effect is used to determine the electron and hole mobilities in a bismuth nanowire. We identify an excess hole density from a doping effect introduced during the on-film-formation-of-nanowires fabrication process. Three electron subbands and a single hole band contribute to the oscillatory magnetoresistance and these bands can be decomposed by fast Fourier transform. The periodic field dependence of magnetic anisotropy (de Haas-van Alphen effect) has been studied for bismuth and zinc crystals by the torque method between about and 32 kG at degrees K. We describe here the study of the Shubnikov-de Haas effect and thermoelectric properties of p-(Bi Sb ) 2 Te 3 single crystals doped with Ga, n-Bi 2- x Tl x Se 3 and p-Sb 2- x Tl x Te 3. Using Fourier spectra of the oscillations we calculated the mobility of charge carriers and its variation upon doping. Very large magnetoresistance with ratios as much as at 5 K and at K under 5 T, Shubnikov-de Haas oscillations, and finite-size effects have been observed. View Show abstract.